Fast tuneable InGaAsP DBR laser using quantum-confined stark-effect-induced refractive index change

We report a monolithically integrated InGaAsP DBR ridge waveguide laser that uses the quantum-confined Stark effect (QCSE) to achieve fast tuning response. The laser incorporates three sections: a forward-biased gain section, a reverse-biased phase section, and a reverse-biased DBR tuning section. The laser behavior is modeled using transmission matrix equations and tuning over similar to 8 nm is predicted. Devices were fabricated using post-growth shallow ion implantation to reduce the loss in the phase and DBR sections by quantum well intermixing. The lasing wavelength was measured while varying the reverse bias of the phase and DBR sections in the range 0 V to < - 2.5 V. Timing was noncontinuous over a similar to 7-nm-wavelength range, with a side-mode suppression ratio of similar to 20 dB. Coupled cavity effects due to the fabrication method used introduced discontinuities in tuning. The frequency modulation (FM) response was measured to be uniform within 2 dB over the frequency range 10 MHz to 10 GHz, indicating that tuning times of 100 ps are possible

A monolithic MQW InP/InGaAsP-based comb generator

We report a monolithic optical frequency comb generator using quaternary/quaternary multiple quantum well InV/InGaAsP material as phase modulator and gain medium in a Frequency Modulated (FM) laser design. The modulation was generated by quantum confined Stark effect to achieve a comb-line spacing of 24.4 GHz. The laser was fabricated using a single epitaxial growth step and quantum well intermixing to realize low loss phase and modulation sections. The resulting comb generator produces lines with a spacing exactly given by the modulation frequency, differential phase noise between adjacent lines of -82 dBc/Hz at 1 kHz offset and a comb spectrum width of up to 2 THz

Room temperature InGaAs/InP distributed feedback laser directly grown on silicon

We report an optically pumped room-temperature O-band DFB laser, based on the buffer-less epitaxial growth of high quality InGaAs/InP waveguides directly on silicon wafer

Carrier lifetime assessment in integrated Ge waveguide devices

Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 pm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2 x10(19) cm(-3)

Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy

Carrier lifetimes in Ge-on-Si waveguides are deduced using time-resolved infrared transmission pump-probe spectroscopy. Dynamics of pump-induced excess carriers generated in waveguides with varying Ge thickness and width is probed using a CW laser. The lifetimes of these excess carriers strongly depend on the thickness and width of the waveguide due to defect assisted surface recombination. Interface recombination velocities of 0.975 x 10(4) cm/s and 1.45 x 10(4) cm/s were extracted for the Ge/Si and the Ge/SiO2 interfaces, respectively. Published by AIP Publishing

A monolithic MQW InP-InGaAsP-Based optical comb generator

We report the first demonstration of a monolithic optical-frequency comb generator. The device is based on multi-section quaternary/quaternary eight-quantum-well InP-InGaAsP material in a frequency-modulated (FM) laser design. The modulation is generated using quantum-confined Stark-effect phase-induced refractive index modulation to achieve fast modulation up to 24.4 GHz. The laser was fabricated using a single epitaxial growth step and quantum-well intermixing to realize low-loss phase adjustment and modulation sections. The output was quasicontinuous wave with intensity modulation at less than 20% for a total output power of 2 mW. The linewidth of each line was limited by the linewidth of the free running laser at an optimum of 25 MHz full-width at half-maximum. The comb generator produces a number of lines with a spacing exactly equal to the modulation frequency (or a multiple of it), differential phase noise between adjacent lines of -82 dBc/Hz at 1-kHz offset (modulation source-limited), and a potential comb spectrum width of up to 2 THz (15 nm), though the comb spectrum was not continuous across the full span

Low-power, low-penalty, flip-chip integrated, 10Gb/s ring-based 1V CMOS photonics transmitter

Modulation with 7.5dB transmitter penalty is demonstrated from a novel 1.5Vpp differential CMOS driver flip-chip integrated with a Si ring modulator, consuming 350fJ/bit from a single 1V supply at bit rates up to 10Gb/s

Monolithic integrated InP distributed bragg reflector (DBR) lasers on (001) silicon

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